| Title:
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Ge-nanoclusters were formed by electron-beam irradiation in Ge-doped silica-on-silicon thin films. The size and density of the clusters can be controlled by the irradiation intensity and time. |
| Type:
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Journal articleJournal article |
| Participant(s):
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Technical University of Denmark
Email:
Technical University of Denmark
Technical University of Denmark
Email:
Technical University of Denmark
Email:
Technical University of Denmark
Email:
|
| Abstract:
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Ge-nanoclusters were formed by electron-beam irradiation in Ge-doped silica-on-silicon thin films. The size and density of the clusters can be controlled by the irradiation intensity and time. |
| Published:
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in journal: ELECTRONICS LETTERS (ISSN: 0013-5194) (DOI: http://dx.doi.org/10.1049/el:20060399), vol: 42, issue: 9, pages: 532-534, 2006 |
| DOI:
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