Mads Brandbyge

Mads Brandbyge

Professor

DTU NANOTECH
Department of Micro- and Nanotechnology

Technical University of Denmark

Ørsteds Plads

Building 345C, room 201F

2800 Kgs. Lyngby

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2016
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First-principles method for electron-phonon coupling and electron mobility

Gunst, Tue ; Markussen, Troels ; Stokbro, Kurt ; Brandbyge, Mads
in journal: Physical Review B (ISSN: 1098-0121) (DOI: http://dx.doi.org/10.1103/physrevb.93.035414), vol: 93, issue: 3, 2016

Type: Journal article (Peer reviewed)

Status: Published     |    Year: 2016     |    DOI: http://dx.doi.org/10.1103/physrevb.93.035414

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Current-induced runaway vibrations in dehydrogenated graphene nanoribbons

Christensen, Rasmus Bjerregaard ; Lu, Jing Tao ; Hedegard, Per ; Brandbyge, Mads
in journal: Beilstein Journal of Nanotechnology (ISSN: 2190-4286) (DOI: http://dx.doi.org/10.3762/bjnano.7.8), vol: 7, pages: 68-74, 2016

Type: Journal article (Peer reviewed)

Status: Published     |    Year: 2016     |    DOI: http://dx.doi.org/10.3762/bjnano.7.8

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All-graphene edge contacts

Jacobsen, Kåre Wedel ; Falkenberg, Jesper Toft ; Papior, Nick Rübner ; Bøggild, Peter ; Jauho, Antti-Pekka ; Brandbyge, Mads
in journal: Carbon (ISSN: 0008-6223) (DOI: http://dx.doi.org/10.1016/j.carbon.2016.01.084), vol: 101, pages: 101-106, 2016

Type: Journal article (Peer reviewed)

Status: Published     |    Year: 2016     |    DOI: http://dx.doi.org/10.1016/j.carbon.2016.01.084

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General atomistic approach for modeling metal-semiconductor interfaces using density functional theory and nonequilibrium Green's function

Stradi, Daniele ; Martinez, Umberto ; Blom, Anders ; Brandbyge, Mads ; Stokbro, Kurt
in journal: Physical Review B Condensed Matter (ISSN: 0163-1829), vol: 93, issue: 15, 2016

Type: Journal article (Peer reviewed)

Status: Published     |    Year: 2016

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Electron and phonon drag in thermoelectric transport through coherent molecular conductors

Lü, Jing-Tao ; Wang, Jian-Sheng ; Hedegård, Per ; Brandbyge, Mads
in journal: Physical Review B (ISSN: 0163-1829), vol: 93, issue: 20, 2016

Type: Journal article (Peer reviewed)

Status: Published     |    Year: 2016

 

Tunneling spectra of graphene on copper unraveled

Zhang, Xin ; Stradi, Daniele ; Liu, Lei ; Luo, Hong ; Brandbyge, Mads ; Gu, Gong
in journal: Physical Chemistry Chemical Physics (ISSN: 1463-9076) (DOI: http://dx.doi.org/10.1039/c6cp01572g), vol: 18, issue: 25, pages: 17081-90, 2016

Type: Journal article (Peer reviewed)

Status: Published     |    Year: 2016     |    DOI: http://dx.doi.org/10.1039/c6cp01572g

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Computational Tools and Studies of Graphene Nanostructures

Papior, Nick Rübner ; Brandbyge, Mads (Main supervisor)
DTU Nanotech, pages: 176

Type: Ph.D. thesis

Status: Published     |    Year: 2016

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Inelastic vibrational signals in electron transport across graphene nanoconstrictions

Gunst, Tue ; Markussen, Troels ; Stokbro, Kurt ; Brandbyge, Mads
in journal: Physical Review B (ISSN: 1098-0121) (DOI: http://dx.doi.org/10.1103/PhysRevB.93.245415), vol: 93, issue: 24, 2016

Type: Journal article (Peer reviewed)

Status: Published     |    Year: 2016     |    DOI: http://dx.doi.org/10.1103/PhysRevB.93.245415

 

Localized electronic states at grain boundaries on the surface of graphene and graphite

Luican-Mayer, Adina ; Barrios-Vargas, Jose E. ; Falkenberg, Jesper Toft ; Autès, Gabriel ; Cummings, Aron W. ; Soriano, David ; Li, Guohong ; Brandbyge, Mads ; Yazyev, Oleg V. ; Roche, Stephan ; Andrei, Eva Y.
in journal: 2D materials (ISSN: 2053-1583) (DOI: http://dx.doi.org/10.1088/2053-1583/3/3/031005), vol: 3, issue: 3, 2016

Type: Journal article (Peer reviewed)

Status: Published     |    Year: 2016     |    DOI: http://dx.doi.org/10.1088/2053-1583/3/3/031005

 

Semiconductor band alignment from first principles: a new nonequilibrium Green's function method applied to the CZTSe/CdS interface for photovoltaics

Palsgaard, Mattias Lau Nøhr ; Crovetto, Andrea ; Gunst, Tue ; Markussen, Troels ; Hansen, Ole ; Stokbro, Kurt ; Brandbyge, Mads
part of: 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (ISBN: 978-1-5090-0819-3), pages: 377-380, 2016, IEEE,
Presented at:
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2016, Nuremberg

Type: Article in proceedings (Peer reviewed)

Status: Published     |    Year: 2016     |    DOI: http://dx.doi.org/10.1109/SISPAD.2016.7605225